2SK1880 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*¹
IDR
Pch*²
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
600
±30
—
—
2.0
—
0.85
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
6.5
1.4
250
55
8
10
25
35
30
0.95
350
Ratings
600
±30
1.5
3.0
1.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
100
3.0
8.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V*³
S
ID = 1 A, VDS = 20 V*³
pF VDS = 10 V, VGS = 0,
pF ^{f = 1 MHz}
pF
ns ID = 1 A, VGS = 10 V,
ns ^RL ^{= 30 Ω}
ns
ns
V IF = 1.5 A, VGS = 0
µs IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7