2SK1772 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse test
1.6
1.2
2A
0.8 V_GS = 4 V
0.4
V_GS = 10 V
0
–40 0
40
1A
0.5 A
2A
I _D= 0.5 A, 1 A
80 120 160
Case Temperature T_C (°C)
Body-Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs
V_GS = 0
200 Ta = 25°C
100
50
20
10
5
0.02 0.05 0.1 0.2 0.5 1.0 2.0
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 1 A
V_GS
40
V_DD = 5 V
16
10 V
30
20 V
12
20 ^VDS
8
10
V_DD = 5 V
4
10 V
20 V
0
0
0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
5.0
–25°C
2.0
Tc = 25°C
1.0
0.5
75°C
0.2
0.1
0.05
0.02 0.05 0.1 0.2
V_DS = 10 V
Pulse test
0.5 1.0 2.0
Drain Current I_D (A)
Typical Capacitance vs. Drain to
Source Voltage
1000
100
Ciss
Coss
Crss
10
V_GS= 0
f = 1 MHz
1
0
10 20 30
40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD = 30 V
200
PW = 2 µs
duty ≤ 1 %
100
tf
50
td(off)
20
tr
td(on)
10
5
0.02 0.05 0.1 0.2 0.5 1.0 2.0
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6