2SK1772 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.6
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
10 V _{4 V}
5V
1.6
3.5 V
Pulse test
1.2
3.0 V
0.8
2.5 V
0.4
V_GS = 2 V
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse test
1.6
1.2
2A
0.8
1A
0.4
I _D= 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
Operation in this area is
limited by R_DS(on)
3
PW = 100 µs
1
0.3
0.1
DC
PW
=
Operation
PW
=1
10 _ms
ms
0.03
0.01 ^{Ta = 25°C}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse test
0.8
0.6
75°C
0.4
Tc = 25°C
–25°C
0.2
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse test
5
2
1
VGS = 4 V
0.5
10 V
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)