2SK1764 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1764
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
I_D = 2 A
1A
0.5 A
0.6
V_GS = 4 V
0.4
2 A ^{0.5 A}
1A
0.2
V_GS = 10 V
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80
V_DD = 50 V
16
25 V
10 V
60
12
V_DS
40
V_DD = 50 V
V_GS
8
20
4
25 V
I_D = 1.5 A
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V _{–25°C}
2 ^{Pulse Test TC = 25°C}
1.0
75°C
0.5
0.2
0.1
0.05
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
1000
300
100
30
10
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
V_GS = 0
f = 1 MHz
Crss
3
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
td _(off)
50
tf
20
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1 %
10
tr
5
td _(on)
2
1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6