2SK1764 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1764
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.6
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
10 V
4
4.5 V Pulse Test
5V
7V 4V
3
3.5 V
2
3V
1
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
2A
0.6
0.4
1A
0.2
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Safe Operation Area
10
3
1.0
0.3
Optehriasltiimaornieteaindisby ^{R DS(on)}
DC
operation
0.1
0.03
Ta = 25°C
0.01
0.1 0.3 1.0 3
10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4
V_DS = 10 V
Pulse Test
3
2
1
75°C
–25°C
T_C= 25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 4 V
1.0
0.5
10 V
0.2
0.1
0.05
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)