2SK1579 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1579
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
0.6 _{ID = 1 A}
0.5 A
0.4
I_D = 0.5 A
V_GS = 2 V
V_GS = 4 V
0.2
1A _2A
0
–25 0
25 50 75 100
Case Temperature T_C (°C)
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
2
1 ^{VGS = 2 V}
V_GS = 0
0
0
1.0
2.0
Source to Drain Voltage V_SD (V)
Switching Characteristics
5,000
2,000
V_GS = 4 V, V_DD = 10 V
PW = 2 µs, Duty cycle = 1%
1,000
500
td(off)
tf
200
tr
100
td(on)
50
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 5 V
Pulse Test
20
10
Ta = –25°C
5
25°C
75°C
2
1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
500
Coss
200
Ciss
100
Crss
50
20
10
V_GS = 0
f = 1 MHz
5
0.1 0.2 0.5 1 2
5 10
Drain to Source Voltage V_DS (V)
Rev.2.00 Sep 07, 2005 page 4 of 5