2SK1579 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1579
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)*1
Body to drain diode reverse drain current
Channel power dissipation
IDR
Pch^*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Ratings
12
±7
2
4
2
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source cutoff current
Gate to source cutoff current
Gate to source cutoff voltage
Drain to source on resistance (1)
Drain to source on resistance (2)
DC forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on time
Turn-off time
Note: 3. Pulse Test
Symbol
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
|yfs|
Ciss
Crss
Coss
t(on)
t(off)
Min
—
—
0.4
—
—
1
—
—
—
—
—
Typ
—
—
—
0.36
0.25
2.5
110
30
150
500
1500
Max
1
±5
1.4
0.7
0.35
—
—
—
—
—
—
Unit
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
(Ta = 25°C)
Test conditions
VDS = 8 V, VGS = 0
VGS = ±6.5 V, VDS = 0
VDS = 5 V, ID = 100 µA
VGS = 2.2 V, ID = 0.5 A^*3
VGS = 4 V, ID = 1 A^*3
VDS = 5 V, ID = 1 A,
∆VGS = 0.1 V ^*3
VDS = 5 V, VGS = 0,
f = 1 MHz
ID = 0.2 A, VGS = 0,
Vin = 4 V, RL = 51 Ω^*3
Rev.2.00 Sep 07, 2005 page 2 of 5