2SK1579 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1579
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.6
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
4V
4
3
3.5 V
3V
Ta = 25°C
Pulse Test
2.5 V
2
2V
1
V_GS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source on State Resistance
vs. Gate to Source Voltage
0.5
0.4
0.3
0.2
0.1
Ta = 25°C
Pulse Test
I_D = 0.1 A
0.2 A
0.5 A _{1 A}
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
50
20
10
5
2
1
0.5
DC _{Operation (T}
PW = 10 ms
1 Shot
0.2
C _{= 25°C)}
0.1
Ta = 25°C
0.05
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
Ta = –25°C
25°C
4
75°C
3
2
1
V_DS = 5 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Ta = 25°C
2 ^{Pulse Test}
1
2V
0.5
V_GS = 3 V
4V
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)