2SK1521 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1521, 2SK1522
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
I_D = 50 A
20 A
0.2
0.1
10 A
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20 ^{di/dt = 100 A/µs, Ta = 25°C}
V_GS = 0
Pulse Test
10
5
0.5 1 2
5 10 20
50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DD = 100 V
16
250 V
400 V
300
V_GS
12
V_DS
200
8
I_D = 50 A
100
V_DD = 400 V
4
250 V
100 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
T_C = –25°C
25°C
10
75°C
5
2
1 ^{VDS = 20 V}
Pulse Test
0.5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
5,000
2,000
Switching Characteristics
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty < 1%
1,000
500
200
100
t_{d (off)}
t_f
t_r
t_{d (on)}
50
0.5 1 2
5 10 20
50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6