2SK1521 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1521, 2SK1522
Main Characteristics
Power vs. Temperature Derating
300
200
100
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
100
8V
10 V
80
Pulse Test
60
6V
5.5 V
5V
40
20
4.5 V
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
50 A
4
Pulse Test
3
2
20 A
1
I_D = 10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1,000
300
100
30
10
3
1
OpiselriamtiiotendinbythRiD^sDa_C^Sre(oan_O⁾ _{pePraWtio=n 1(T0Cm=s21(51m°SC}¹_s⁰_h)^01ot0µ₎^sµs
0.3
Ta = 25°C
0.1
1 3 10
2SK1521
2SK1522
30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 20 V
Pulse Test
80
60
40
20 _{TC = 75°C}
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = 10, 15 V
0.02
0.01
5 10 20
50 100 200 500
Drain Current I_D (A)