2SK1521 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1521, 2SK1522
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1521
2SK1522
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*¹
IDR
Pch*²
Tch
Tstg
Ratings
450
500
±30
50
200
50
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source
breakdown voltage
2SK1521
V(BR)DSS
450
2SK1522
500
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
—
Zero gate voltage drain 2SK1521
IDSS
—
current
2SK1522
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1521
RDS(on)
—
state resistance
2SK1522
—
Forward transfer admittance
|yfs|
22
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward voltage
VDF
—
Body to drain diode reverse recovery trr
—
time
Note: 3. Pulse test
Typ
Max
—
—
—
—
—
±10
—
250
—
3.0
0.08
0.10
0.085 0.11
35
—
8700
—
2400
—
235
—
85
—
250
—
600
—
250
—
1.1
—
120
—
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω ID = 25 A, VGS = 10 V *³
S ID = 25 A, VDS = 10 V *³
pF VDS = 10 V, VGS = 0,
pF ^{f = 1 MHz}
pF
ns ID = 25 A, VGS = 10 V,
ns ^RL ^{= 1.2 Ω}
ns
ns
V IF = 50 A, VGS = 0
ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6