2SK1519 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1519, 2SK1520
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
V_GS = 10 V
Pulse Test
0.3
I_D = 50 A
20 A
0.2
10 A
0.1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
1,000
500
di/dt = 100 A/µs, V_GS = 0
Pulse Test
200
100
50
20
10
0.5 1 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1,000
20
800
V_DD = 100 V
250 V
16
400 V
600
V_GS
12
400 ^VDS
8
200
V_DD = 400 V
250 V
I_D = 30 A
4
Pulse Test
100 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 10 V
50 _{Pulse Test}
20
T_C = –25°C
10
25°C
75°C
5
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
10 20
30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
200
100
50
Switching Characteristics
t_{d (off)}
t_f
t_r
t_{d (on)}
20
V_GS
duty
=
<
110%V, ,VP_DW_{D =..=320}
µs
V
10
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Rev.3.00 Apr 27, 2006 page 4 of 6