2SK1519 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1519, 2SK1520
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1519
2SK1520
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Electrical Characteristics
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)*¹
I_DR
Pch*²
Tch
Tstg
Item
Symbol Min
Drain to source
breakdown voltage
2SK1519
V_(BR)DSS
450
2SK1520
500
Gate to source breakdown voltage V_(BR)GSS ±30
Gate to source leak current
I_GSS
—
Zero gate voltage drain 2SK1519
I_DSS
—
current
2SK1520
Gate to source cutoff voltage
V_GS(off)
2.0
Static drain to source on 2SK1519
R_DS(on)
—
state resistance
2SK1520
—
Forward transfer admittance
|y_fs|
15
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body to drain diode forward voltage
V_DF
—
Body to drain diode reverse recovery trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.11
0.12
25
5800
1550
170
65
170
415
200
1.1
120
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
0.15
0.16
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test conditions
V I_D = 10 mA, V_GS = 0
V I_G = ±100 µA, V_DS = 0
µA V_GS = ±25 V, V_DS = 0
µA V_DS = 360 V, V_GS = 0
V_DS = 400 V, V_GS = 0
V I_D = 1 mA, V_DS = 10 V
Ω
I_D = 15 A, V_GS = 10 V *³
S
I_D = 15 A, V_DS = 10 V *³
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
ns I_D = 15 A, V_GS = 10 V,
ns ^RL ^{= 2 Ω}
ns
ns
V I_F = 30 A, V_GS = 0
ns I_F = 30 A, V_GS = 0,
di_F/dt = 100 A/µs
Rev.3.00 Apr 27, 2006 page 2 of 6