2SK1519 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1519, 2SK1520
Main Characteristics
Power vs. Temperature Derating
300
200
100
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
40
6V
Pulse Test
5V
30
4.5 V
20
10
V_GS = 4 V
0
4
8 12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I_D = 50 A
6
4
20 A
2
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.3.00 Apr 27, 2006 page 3 of 6
Maximum Safe Operation Area
1,000
300
100
30
10
3
OpiselriamtiiotendinbytDhRiCs^DaOSre(_p^oaPn_e^{) Wrati=on10(Tms1(1m1S0s0h1o0µ}_ts)^µs
1
C _{= 25°C)}
0.3
Ta = 25°C
0.1
1 3 10
2SK1519
2SK1520
30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
T_C = 75°C
25°C
10
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
V_GS = 10 V, 15 V
0.1
0.05
2
5
10 20 50 100 200
Drain Current I_D (A)