2SK1405 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1405
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
1.6
1.2
0.8
V_GS = 10 V
0.4
I_D = 20 A
10 A
5A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.2
di/dt = 100 A/µs, V_GS = 0
Ta = 25°C
Pulse Test
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1,000
20
V_DD = 100 V
800
250 V
16
400 V
600
V_GS
12
400 _VDS
8
I_D = 15 A
200
V_DD = 400 V
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
T_C = –25°C
25°C
10
75°C
5
2
1
0.5
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
100
Coss
V_GS = 0
Crss
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
t_f
100
50 ^tr
t_{d (on)}
20
10
5
0.2
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.3.00 May 15, 2006 page 4 of 6