2SK1405 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1405
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Electrical Characteristics
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)*1
I_DR
Pch^*2
Tch
Tstg
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 600
Gate to source breakdown voltage V_(BR)GSS ±30
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
2.0
Static drain to source on state
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
9
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body to drain diode forward voltage V_DF
—
Body to drain diode reverse recovery trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.35
14
3150
780
110
35
120
240
100
1.0
140
Ratings
600
±30
15
60
15
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
0.50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 500 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 8 A, V_GS = 10 V *³
S
I_D = 8 A, V_DS = 10 V *³
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
ns I_D = 8 A, V_GS = 10 V,
ns ^RL ^{= 3.75 Ω}
ns
ns
V I_F = 15 A, V_GS = 0
ns I_F = 15 A, V_GS = 0,
di_F/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6