2SK1304 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1304
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
0.08
0.06
I_D = 50 A
20 A
10 A
0.04
0.02
V_GS = 4 V
V_GS = 10 V
50 A
20 A
10 A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200
V_GS = 0
Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80 ^VDS
V_DD = 25 V
16
50 V
80 V
60
12
V_DD = 80 V
40
50 V
25 V
20
V_GS
8
4
I_D = 40 A
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
10
T_C = 25°C
75°C
5
2
V_GS = 10 V
Pulse Test
1.0
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
Crss
100
V_GS = 0
f = 1 MHz
10
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
200
Switching Characteristics
td _(off)
tf
100
50
20
10
0.5
tr
td _(on)
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
1.0 2
5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6