2SK1304 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1304
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
100
10 V
5V
7V
80
Pulse Test
4V
60
3.5 V
40
3V
20
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
50 A
1.2
0.8
20 A
0.4
I_D = 10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
Operation in this Area
200
is Limited by R_{DS (on)}
100
50
20
10
5
2
TDaC=OPp2eW5ra°^{=tCio1n0(mT1Csm=(11s02S05h°1µCo0st))µs}
1.0
0.5
13
10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
75°C
10
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
V_GS = 4 V
10 V
0.01
0.005
2
5 10 20
50 100 200
Drain Current I_D (A)