2SD1209 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SD1209(K)
Base to Emitter Saturation Voltage
vs. Collector Current
10
I_C = 1000 I_B
5
Pulse
Ta = –25°C
2
1.0
25 75
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1.0
Collector Current I_C (A)
Rev.2.00 Aug 10, 2005 page 4 of 5