2SD1209 Datasheet, PDF(2/6 Page) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

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2SD1209 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

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2SD1209(K)

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Note: 1. Pulse test

Symbol

V(BR)CBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

Min

4000

Typ

Max

100

1.5

2.0

Unit

ÂµA

(Ta = 25Â°C)

Test conditions

IC = 0.1 mA, IE = 0

VCE = 60 V, RBE = â

VEB = 7 V, IC = 0

VCE = 3 V, IC = 0.5 A*1

IC = 500 mA, IB = 0.5 mA*1

Rev.2.00 Aug 10, 2005 page 2 of 5

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