2SD1209 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SD1209(K)
Main Characteristics
Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
0.5
Ta = 25°C
Pulse
0.4
0.3
16 ₁₄₁₂₁₀
8
6
4
0.2
2 µ^A
0.1
I_B = 0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
10
V_CE = 3 V
0.5
Ta = 25°C
Pulse
0.2
0.1
0.05
0.02
0.01
0.1 0.2
0.5 1.0 2
5 10
Base to Emitter Voltage V_BE (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
Area of Safe Operation
10
5
i_C(peak)
2
Ta = 25°C
1 Shot Pulse
1.0
0.5
0.2
0.1
1.0 2
5 10 20 50 100
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
10⁵
75
25
Ta = ^{–25°C}
10⁴
V_CE = 3 V
Pulse
10³
0.01 0.02 0.05 0.1 0.2
0.5 1.0
Collector Current I_C (A)
Collector to Emitter Saturation
Voltage vs. Collector Current
10
I_C = 1000 I_B
5
Pulse
2
Ta = –25°C
1.0
0.5
25 75
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1.0
Collector Current I_C (A)