2SC2545 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547
Base to Emitter Saturation Voltage
vs. Collector Current
10
I_C = 10 I_B
5
2
1.0
0.5
0.2
0.1
1
2
5 10 20 50 100
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
100
I_E = 0
50
f = 1 MHz
20
10
5
2
1
0.5 1.0 2
5 10 20 50
Collector to Base Voltage V_CB (V)
Contours of Constant Noise Figure
100
V_CE = 6 V
30
f = 120 Hz
10
3
1.0
0.3
0.1
0.03
NF = 0.5 dB
1
2
4
6
10
0.01
0.01 0.03 0.1 0.3 1.0 3 10 30 100
Collector Current I_C (mA)
2,000
1,000
500
Gain Bandwidth Product vs.
Collector Current
V_CE = 12 V
200
100
50
20
12
5 10 20 50 100
Collector Current I_C (mA)
Contours of Constant Noise Figure
100
30 _{VCE = 6 V}
10 ^{f = 1 kHz}
3
1.0
NF = 0.5 dB
0.3
1
2
0.1
4
6
0.03
10
0.01
0.01 0.03 0.1 0.3 1.0 3
10 30 100
Collector Current I_C (mA)
Contours of Constant Noise Figure
100
V_CE = 6 V
30
f = 10 Hz
10
3
1.0
0.3
NF = 0.5 dB
1 2 4 6 10
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3 10 30 100
Collector Current I_C (mA)
Rev.3.00 Aug 10, 2005 page 4 of 5