2SC2545 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547
Main Characteristics
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
25
16
20
12
15
8
10
4
5 µA
I_B = 0
0
4
8
12
16
20
Collector to Emitter Voltage V_CE (V)
5,000
2,000
1,000
500
DC Current Transfer Ratio vs.
Collector Current
V_CE = 12 V
Pulse
200
100
50
0.1 0.2 0.5 1.0 2 5 10 20 50 100
Collector Current I_C (mA)
Rev.3.00 Aug 10, 2005 page 3 of 5
Typical Output Characteristics
50
70
60
40
50
30
40
20
30
P
C _{= 0.4 W}
20
10
10 µA
I_B = 0
0
4
8
12
16
20
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
10
V_CE = 12 V
5
2
1.0
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.0
I_C = 10 I_B
0.5
0.2
0.1
0.05
0.02
0.01
1
2
5 10 20 50 100
Collector Current I_C (mA)