2SC2545 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2545, 2SC2546, 2SC2547
Electrical Characteristics
2SC2545
2SC2546
2SC2547
Item
Symbol Min Typ Max Min Typ Max Min Typ Max
Collector to base breakdown V(BR)CBO 60 — — 90 — — 120 — —
voltage
Collector to emitter
breakdown voltage
V_(BR)CEO 60 — — 90 — — 120 — —
Emitter to base breakdown
V_(BR)EBO
5
——
5
——
5
——
voltage
Collector cutoff current
I_CBO
— — 0.1 — — 0.1 — — 0.1
Emitter cutoff current
DC current transfer ratio
I_EBO
— — 0.1 — — 0.1 — — 0.1
h_FE*¹ 250 — 1200 600 — 1200 250 — 800
Collector to emitter
saturation voltage
Base to emitter voltage
V_CE(sat) — — 0.2 — — 0.2 — — 0.2
V_BE
— 0.6 — — 0.6 — — 0.6 —
Gain bandwidth product
f_T
— 90 — — 90 — — 90 —
Collector output capacitance Cob — 3.0 — — 3.0 — — 3.0 —
Noise voltage referred input
e_n
— 0.5 — — 0.5 — — 0.5 —
Note: 1. The 2SC2545 and 2SC2547 are grouped by h_FE as follows.
D
E
F
2SC2545
—
400 to 800 600 to 1200
2SC2547
250 to 500 400 to 800 —
(Ta = 25°C)
Unit
Test conditions
V I_C = 10 µA, I_E = 0
V I_C = 1 mA,
R_BE = ∞
V I_E = 10 µA, I_C = 0
µA
µA
V
V
MHz
pF
nV/
√Hz
V_CB = 50 V, I_E = 0
V_EB = 2 V, I_C = 0
V_CE = 12 V,
I_C = 2 mA
I_C = 10 mA,
I_B = 1 mA
V_CE = 12 V,
I_C = 2 mA
V_CE = 12 V,
I_C = 2 mA
V_CB = 10 V, I_E = 0,
f = 1 MHz
V_CE = 6V,
I_C = 10 mA,
f = 1 kHz,
R_g = 0, ∆f = 1Hz
Rev.3.00 Aug 10, 2005 page 2 of 5