R8C2E Datasheet, PDF (321/354 Pages) Renesas Technology Corp – MCU

R8C/2E Group, R8C/2F Group
21. Electrical Characteristics
Table 21.20 Electrical Characteristics (3) [VCC = 3 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ. Max.
VOH
Output “H” voltage Except P1_0 to P1_7, IOH = −1 mA
XOUT
VCC − 0.5
−
VCC
V
P1_0 to P1_7
Drive capacity IOH = −2 mA VCC − 0.5 −
HIGH
VCC
V
Drive capacity IOH = −1 mA VCC − 0.5 −
LOW
VCC
V
XOUT
Drive capacity IOH = −0.1 mA VCC − 0.5 −
HIGH
VCC
V
Drive capacity IOH = −50 µA VCC − 0.5 −
LOW
VCC
V
VOL
Output “L” voltage Except P1_0 to P1_7, IOL = 1 mA
XOUT
−
−
0.5
V
P1_0 to P1_7
Drive capacity IOL = 2 mA
−
−
0.5
V
HIGH
Drive capacity IOL = 1 mA
−
−
0.5
V
LOW
XOUT
Drive capacity IOL = 0.1 mA
−
HIGH
−
0.5
V
Drive capacity IOL = 50 µA
−
−
0.5
V
LOW
VT+-VT- Hysteresis
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, CLK0
0.1
0.3
−
V
RESET
0.1
0.4
−
V
IIH
Input “H” current
VI = 3 V, VCC = 3 V
−
−
4.0
µA
IIL
Input “L” current
VI = 0 V, VCC = 3 V
−
−
−4.0 µA
RPULLUP Pull-up resistance
VI = 0 V, VCC = 3 V
66
160 500 kΩ
RfXIN Feedback resistance XIN
−
3.0
−
MΩ
VRAM RAM hold voltage
During stop mode
1.8
−
−
V
NOTE:
1. VCC =2.7 to 3.3 V at Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.
Rev.1.00 Dec 14, 2007 Page 305 of 332
REJ09B0349-0100