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| R1EX24512BSAS0A Datasheet, PDF (3/19 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit) | |||
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R1EX24512BSAS0A/R1EX24512BTAS0A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
â0.6 to +7.0
V
Vin
â0.3 to VCC +0.3
V
Topr
â40 to +85
°C
Storage temperature range
Tstg
â55 to +125
°C
Notes: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
Min
Typ
Max
Unit
VCC
1.8

5.5
V
VSS
0
0
0
V
VIH
VCC Ã 0.7

VCC + 0.3
V
VIL
â0.3

VCC Ã 0.3
V
Topr
â40

+85
°C
DC Characteristics
(Ta = â40 to +85°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
ILI


2.0
µA VCC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current
ILO


2.0
µA VCC = 5.5 V, Vout = 0 to 5.5 V
Standby VCC current
ISB

1.0
2.0
µA Vin = VSS or VCC
Read VCC current
ICC1


1.0
mA VCC = 5.5 V, Read at 400 kHz
Write VCC current
ICC2


5.0
mA VCC = 5.5 V, Write at 400 kHz
Output low voltage
VOL2


0.4
V VCC = 2.7 to 5.5 V, IOL = 3.0 mA
VOL1


0.2
V VCC = 1.8 to 2.7 V, IOL = 1.5 mA
Capacitance
(Ta = +25°C, f = 1 MHz)
Test conditions
Parameter
Symbol Min
Typ
Max
Unit
Input capacitance (A0 to A2, SCL, WP) Cin*1


6.0
pF Vin = 0 V
Output capacitance (SDA)
CI/O*1


6.0
pF Vout = 0 V
Note: 1. Not 100% tested.
Memory cell characteristics
Endurance
Data retention
Notes: 1. Not 100% tested.
Ta=25°C
1,000k Cycles min.
100 Years min.
Ta=85°C
100k Cycles min
10 Years min.
(VCC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 3 of 17
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