R1EX24512BSAS0A Datasheet, PDF (11/19 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

R1EX24512BSAS0A/R1EX24512BTAS0A
Write Operations(WP=High)
Byte Write: (Write operation during WP=High status)
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment
"0" at the ninth clock cycle. After these, the 512kbit EEPROM receives 2 sequence 8-bit memory address words.
Upon receipt of this memory address, the EEPROM outputs acknowledgment "0". After receipt of 8-bit write data, the
EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write operations are not allowed.
Byte Write Operation
WP
Device
address
512k ^{1 0 1 0}
Start
1st Memory
address (n)
W
ACK
R/W
2nd Memory
address (n)
No ACK
Write data (n)
ACK
ACK
Stop
Page Write:
The page write is the same sequence as the byte write. The page write is initiated by a start condition, device address
word and memory address(n) with every ninth bit acknowledgment"0". But after inputting write data(Dn) , the
EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write operations are not allowed.
Page Write Operation
WP
512k
Start
Device
address
1010
1st Memory
address (n)
W
ACK
R/W
2nd Memory
address (n)
No ACK
No ACK
Write data (n) Write data (n+m)
ACK
ACK
Stop
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 11 of 17