N0201R Datasheet, PDF (3/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR

N0201R
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
−10
VCE = −6 V
Pulsed
−1
TA = 125˚C
−0.1
25˚C
−25˚C
−0.01
−0.001
−0.0001
−0.0
100
−0.3
−0.6
−0.9
−1.2
VBE - Base to Emitter Voltage - (V)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 MHz
10
1_−0.1
−1
−10
−100
VCB - Collector to Base Voltage - (V)
1000
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
VCE = −6 V
100
10
−1
1000
−10
−100
IC - Collector Current - (mA)
−1000
SWITCHING TIME vs.
COLLECTOR CURRENT
ton
100
10
−10
tstg
tf
VCE = −10 V
IC = 10IB1 = −10IB2
PW = 50 μs
−100
−1000
IC - Collector Current - (mA)
−10000
R07DS0718EJ0100 Rev.1.00
Mar 30, 2012
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