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N0201R Datasheet, PDF (1/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR
N0201R
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
 Complements to N0201S.
 VCEO = 25 V
 IC(DC) = 1.0 A
 Miniature package SOT-23F (2SB798: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number
N0201R-T1-AT
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Data Sheet
R07DS0718EJ0100
Rev.1.00
Mar 30, 2012
Mass [TYP.]
0.0126g
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage VCEO
25
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
1.0
A
Collector Current (pulse) *1
IC(pulse)
1.5
A
Total Power Dissipation
PT1
Total Power Dissipation *2
PT2
0.2
W
1.0
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to 150
C
Note *1. PW  10 ms, Duty Cycle  50%
*2. FR-4 board size 2500 mm2  1.6 mm, t  5 sec
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
Symbol
ICBO
IEBO
hFE1*1
hFE2*1
VCE(sat)*1
VBE(sat)*1
VBE*1
fT
Cob
Condition
VCB = 30 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 1.0 V, IC = 100 mA
VCE = 1.0 V, IC = 1.0 A
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, IB = 100 mA
VCE = 6.0 V, IC = 10 mA
VCE = 6.0 V, IE = 10 mA
VCB = 10.0 V, IE = 0, f = 1.0 MHz
MIN.
90
50
600
TYP.
200
100
0.25
1.0
640
90
27
MAX.
100
100
400
0.4
1.2
700
Unit
nA
nA
V
V
mV
MHz
pF
hFE Classification
Marking
hFE1
DM
90 to 180
DL
135 to 270
DK
200 to 400
R07DS0718EJ0100 Rev.1.00
Mar 30, 2012
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