N0201R Datasheet, PDF (2/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR

N0201R
TYPICAL CHARACTERISTICS (T_a = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
−0.03
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
SAFE OPERATING AREA
−10
Ta = 25˚C
Single pulse
1 ms
−1
10 ms
100 ms
−0.1
−0.01
−1
−10
−100
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−1
−0.02
−0.01
0
0
1000
−100
−90
−80
−70
−60
−50
−40
−30
−20
IB = −10 A
−2
−4
−6
−8
−10
VCE - Collector to Emitter Voltage - (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
125˚C
25˚C
25˚C
100
VCE = −1 V
Pulsed
−5.0
−0.8
−4.5
−4.0
−3.5
−0.6
−3.0
−2.5
−0.4
−2.0
−1.5
−0.2
−1.0
IB = −0.5 mA
0
0
−0.4
−0.8
−1.2
−1.6
−2
VCE - Collector to Emitter Voltage - (V)
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−10
IC = 10IB
−1
−0.1
−0.01
VBE(sat)
VCE(sat)
10
−0.001 −0.01
−0.1
−1
−10
IC - Collector Current - (A)
R07DS0718EJ0100 Rev.1.00
Mar 30, 2012
−0.001
−0.001
−0.01
−0.1
−1
−10
IC - Collector Current - (A)
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