HAT2280R Datasheet, PDF (3/6 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2280R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive2ODprieveraOtipoenration}
0
50
100
150
200
Ambient Temperature Ta (˚C)
Maximum Safe Operation Area
500
100
10
1
DC
PW
Operation
Operation in
this area is
1
= ₁₀
(PW
m¹_s^{0100µsµs}
ms
< ₁^N₀^ot_{se) 6}
0.1 ^{limited by R DS(on)}
Ta = 25 ˚C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
R07DS1372EJ0201 Rev.2.01
Jan 20, 2017
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