HAT2280R Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2280R
Silicon N Channel Power MOSFET
Power Switching
Features
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 27 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
78
DD
56
DD
2
4
G
G
S1
MOS1
S3
MOS2
Data Sheet
R07DS1372EJ0201
Rev.2.01
Jan 20, 2017
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
6.6
52.8
Body-drain diode reverse drain current
IDR
6.6
Avalanche current
IAP ^{Note 2}
6.6
Avalanche energy
EAR ^{Note 2}
4.3
Channel dissipation
Pch ^Note3
1.5
Channel dissipation
Pch ^Note4
2.3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
4. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
C
C
R07DS1372EJ0201 Rev.2.01
Jan 20, 2017
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