HAT2280R Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2280R
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
30
Gate to source leak current
IGSS
—
Zero gate voltege drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 5. Pulse test
Typ
—
—
—
—
27
40
8.5
410
110
41
3.0
1.1
1.1
5
13.5
34
3.4
0.85
16
Max
—
±0.1
1
2.5
34
57
—
—
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 3.3 A, VGS = 10 V ^Note5
ID = 3.3 A, VGS = 4.5 V ^Note5
ID = 3.3 A, VDS = 10 V ^Note5
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 6.6 A
VGS = 10 V, ID = 3.3 A
VDD  10 V
RL = 0.3 
Rg = 4.7 
IF = 6.6 A, VGS = 0 ^Note5
IF = 6.6 A, VGS = 0
diF/ dt = 100 A/ µs
R07DS1372EJ0201 Rev.2.01
Jan 20, 2017
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