HAT2279N Datasheet, PDF (3/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2279N
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 80
Gate to source leak current
IGSS
—
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
IDSS
—
VGS(off) 0.8
RDS(on) —
RDS(on) —
|yfs|
42
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse recovery trr
—
time
Notes: 4. Pulse test
Typ Max Unit
—
—
V
—
± 0.5 µA
—
1
µA
—
2.3 V
9.8 12.3 mΩ
11.3 15.3 mΩ
70
—
S
3520 —
pF
410 —
pF
160 —
pF
0.5 —
Ω
60
—
nc
9.5 —
nc
9.0 —
nc
9.5 —
ns
14.5 —
ns
56
—
ns
9.5 —
ns
0.83 1.08 V
50
—
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V ^Note4
ID = 15 A, VGS = 4.5 V ^Note4
ID = 15 A, VDS = 10 V ^Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD ≅ 30 V
RL = 2 Ω
Rg = 4.7 Ω
IF = 30 A, VGS = 0 ^Note4
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00, Jul.05.2005, page 3 of 4