HAT2279N Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2279N
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
VDSS
VGSS
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
ID
ID(pulse)Note1
IDR
IAP ^{Note 2}
EAR ^{Note 2}
Pch ^Note3
Channel to Case Thermal Resistance θch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00, Jul.05.2005, page 2 of 4