HAT2279N Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2279N
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 9.8 mΩ typ. (at V_GS = 10 V)
• Lead Free
Outline
Preliminary
Rev.2.00
Jul.05.2005
LFPAK-i
4
G
5678
DDDD
1(S)
2(S)
3(S)
4(G)
SSS
12 3
8(D)
7(D)
6(D)
5(D)
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Rev.2.00, Jul.05.2005, page 1 of 4