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BB502C Datasheet, PDF (3/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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BB502C
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
Application Circuit
VAGC = 4 to 0.3 V
BBFET
VDS = 5 V
RFC
Output
Input
RG
VGG = 5 V
Rev.6.00 Apr 27, 2006 page 3 of 10
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