|
BB502C Datasheet, PDF (2/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |||
|
◁ |
BB502C
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
6
+6
â0
+6
â0
20
100
150
â55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
6
+6
+6
â
â
0.5
VG2S(off)
0.5
ID(op)
8
|yfs|
20
Ciss
1.4
Coss
0.7
Crss
â
PG
17
NF
â
Typ
â
â
â
â
â
0.7
0.7
11
25
1.7
1.1
0.02
22
1.6
Max
â
â
â
+100
+100
1.0
1.0
14
30
2.0
1.5
0.05
â
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
(Ta = 25°C)
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = +10 µA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = +5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 180 kâ¦
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kâ¦, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kâ¦
f = 1 MHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kâ¦
f = 900 MHz
Rev.6.00 Apr 27, 2006 page 2 of 10
|
▷ |