BB502C Datasheet, PDF (1/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0832-0600
(Previous ADE-208-810C)
Rev.6.00
Apr 27, 2006
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.6 dB typ. at f = 900 MHz
• High gain; PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “BS–”.
2. BB502C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.6.00 Apr 27, 2006 page 1 of 10