2SC4196 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4196
Main Characteristics
Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
4
V_CE = 5 V
Pulse
3
2
1
0
1
2
5 10 20
50
Collector Current I_C (mA)
1,000
500
200
100
50
Oscillating Output Voltage vs.
Supply Voltage
f = 930 MHz
5
3
I_C = 8 mA
20
10
0
2
4
6
8
10
Supply Voltage V_CC (V)
Rev.3.00 Aug 10, 2005 page 3 of 7
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 5 V
160 ^Pulse
120
80
40
0
12
5 10 20
50
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
1.1
I_E = 0
1.0 ^{f = 1 MHz}
0.9
0.8
0.7
0.6
1
2
5 10 20
50
Collector to Base Voltage V_CB (V)
Oscillating Output Voltage vs.
Collector Current
1,000
500
f = 930 MHz
V_CC = 8 V
200
5
100
3
50
20
10
0.5 1.0 2
5 10 20
Collector Current I_C (mA)