2SC4196 Datasheet, PDF(2/8 Page) Hitachi Semiconductor

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2SC4196 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC4196

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Oscillating output voltage

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

VCE(sat)

hFE

Cob

VOSC

Min

1.8

(Ta = 25Â°C)

Typ Max Unit

Test conditions

V IC = 10 ÂµA, IE = 0

0.3

ÂµA VCB = 15 V, IE = 0

ÂµA VCE = 15 V, RBE = â

1.0

ÂµA VEB = 3 V, IC = 0

0.3

V IC = 20 mA, IB = 4 mA

180

VCE = 5 V, IC = 5 mA

0.7

1.0

pF VCB = 10 V, IE = 0, f = 1MHz

2.4

GHz VCE = 5 V, IC = 20 mA

200

mV VCC = 5 V, IC = 5 mA,

f = 930 MHz

Rev.3.00 Aug 10, 2005 page 2 of 7

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