R1EX24064ASAS0A_15 Datasheet, PDF (25/26 Pages) Renesas Technology Corp – Two-wire serial interface 64k EEPROM (8-kword × 8-bit)

Revision History
R1EX24064AxxS0A Data Sheet
Rev. Date
Contents of Modification
Page Description
0.01 Nov. 05, 2007  Initial issue
1.00 April. 21, 2008  Deletion preliminary
1.01 Jan.13, 2009
2.00 Oct.26, 2009
P1 Features
Power dissipation Active(write) change 3.5mA to 3.0mA.
Endurance cycles change 10⁶ cycles to 1,000k cycles @ 25°C.
Data retentions years change 10 years to 100 years @ 25°C.
P4 DC characteristics
Write Vcc current change 3.5 mA to 3.0 mA.
Memory cell characteristics new is described.
P5 AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
P8 Addition of device address description
These pins are internally pulled-down to Vss. The device reads these pins
as Low if unconnected.
Addition of write protect description
The WP pin is internally pulled-down to Vss. Write operations for all
memory array are allowed if unconnected.
P20 Change of Vcc turn on description
·Vcc turn on speed should be longer than 10 µs . to
·Vcc turn on rate should be longer than 2 µs/V.