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HD74LS12 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Triple 3-input Positive NAND Gates(with Open Collector Outputs)
HD74LS12
Absolute Maximum Ratings
Item
Symbol
Ratings
Unit
Supply voltage
VCC
7
V
Input voltage
VIN
7
V
Power dissipation
Storage temperature
PT
400
mW
Tstg
–65 to +150
°C
Note: Voltage value, unless otherwise noted, are with respect to network ground terminal.
Recommended Operating Conditions
Item
Supply voltage
Output voltage
Output current
Operating temperature
Symbol
VCC
VOH
IOL
Topr
Min
4.75
—
—
–20
Typ
5.00
—
—
25
Max
5.25
5.5
8
75
Unit
V
V
mA
°C
Electrical Characteristics
Item
Input voltage
Symbol
VIH
VIL
Output voltage
VOL
Output current
IOH
IIH
Input current
IIL
II
Supply current
ICCH
ICCL
Input clamp voltage
VIK
Note: * VCC = 5 V, Ta = 25°C
min.
2.0
—
—
—
—
—
—
—
—
—
—
typ.*
—
—
—
—
—
—
—
—
0.7
1.8
—
max.
—
0.8
0.5
0.4
100
20
–0.4
0.1
1.4
3.3
–1.5
Unit
V
V
V
µA
µA
mA
mA
mA
mA
V
(Ta = –20 to +75 °C)
Condition
IOL = 8 mA
IOL = 4 mA
VCC = 4.75 V, VIH = 2 V
VCC = 4.75 V, VIL = 0.8 V, VOH = 5.5 V
VCC = 5.25 V, VI = 2.7 V
VCC = 5.25 V, VI = 0.4 V
VCC = 5.25 V, VI = 7 V
VCC = 5.25 V
VCC = 5.25 V
VCC = 4.75 V, IIN = –18 mA
Switching Characteristics
(VCC = 5 V, Ta = 25°C)
Item
Symbol
min.
typ.
max.
Unit
Condition
Propagation delay time
tPLH
—
tPHL
—
17
15
32
28
ns
ns
CL = 15 pF, RL = 2 kΩ
Note: Refer to Test Circuit and Waveform of the Common Item "TTL Common Matter (Document No.: REJ27D0005-
0100)".
Rev.2.00, Feb.18.2005, page 2 of 3