M16C5M_15 Datasheet, PDF (127/159 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5M Group, M16C/57 Group
5. Electrical Characteristics
5.4.6 E2PROM Emulation Data Flash
K-Version
Table 5.57 E²PROM Emulation Data Flash Electrical Characteristics
V_CC = 3.0 to 5.5 V at T_opr = -40°C to 125°C, unless otherwise specified.
Symbol
Characteristic
Standard
Unit
Min. Typ. Max.
— Program/erase cycles ⁽¹⁾
100000
times
— Word program time (2-byte program)
100 2000
µs
— Read time (2-byte read)
— Block erase time (32-byte block)
1
µs
15
200
ms
t_PS
Flash memory circuit stabilization wait time
(sleep mode to normal mode)
35
50
µs
— Data hold time ⁽²⁾
Ambient temperature = 55°C ^{(3, 4)}
20
years
Notes:
1. Definition of program/erase cycles definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled. (overwrite disabled).
2. The data hold time includes the periods when the supply voltage is not applied and no clock is
provided.
3. This data hold time includes (3000) hours in Ambient temperature = 125°C.
4. Please contact a Renesas Electronics sales office regarding data retention time other than the
above.
R01DS0019EJ0110 Rev.1.10
Sep 01, 2011
Page 127 of 156