R1LV0416D Datasheet, PDF (1/17 Pages) Renesas Technology Corp – 4M SRAM (256-kword × 16-bit)

R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
 Standby: 3 µW (typ) (V_CC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
 Three state output
• Battery backup operation.
 2 chip selection for battery backup
• Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15