PE9354 Datasheet, PDF (1/7 Pages) Peregrine Semiconductor Corp. – SPDT High Power UltraCMOS™ RF Switch Rad hard for Space Applications

Product Description
The PE9354 SPDT High Power UltraCMOS™ RF Switch is
designed to cover a broad range of applications from near DC
to 3000 MHz. This single-supply reflective switch integrates on-
board CMOS control logic driven by a simple, single-pin CMOS
and TTL compatible control input. Using a nominal +3-volt
power supply, a typical input 1 dB compression point of +31
dBm can be achieved. The PE9354 also exhibits input-output
isolation of better than 30 dB at 2000 MHz and is offered in a
small 8-lead ceramic SOIC package.
The PE9354 is optimized for commercial space applications.
Single Event Latch up (SEL) is physically impossible and
Single Event Upset (SEU) is better than 10-9 errors per bit/day.
Fabricated in Peregrine’s UltraCMOS™ technology, the
PE9354 offers excellent RF performance and intrinsic radiation
tolerance.
Product Specification
PE9354
SPDT High Power
UltraCMOS™ RF Switch
Rad hard for Space Applications
Features
• Single 3-volt power supply
• Low insertion loss: 0.55 dB at 2000 MHz
• High isolation of 30 dB at 2000 MHz
• Typical input 1 dB compression point of
+31 dBm
• 100 Krad total dose
• Single-pin CMOS or TTL logic control
• Low cost
Figure 1. Functional Schematic Diagram
RFC
Figure 2. Package Type
8-lead CSOIC
RF1
RF2
CMOS
Control
Driver
CTRL
Table 1. A/C Electrical Specifications -55 °C to +125 °C, V_DD = 3.0 V (ZS = ZL = 50 Ω)
Parameter
Conditions
Operation Frequency¹
Insertion Loss
2000 MHz
Isolation – RFC to RF1/RF2
2000 MHz
Isolation – RF1 to RF2
2000 MHz
Return Loss²
2000 MHz
Input 1 dB Compression
2000 MHz
Note: 1. Device linearity will begin to degrade below 10 MHz.
Note: 2. Return loss not measured in production due to equipment limitations
Minimum
DC
28
24
28
Typical
0.55
32
28
22
31
Maximum
3000
0.80
Units
MHz
dB
dB
dB
dB
dBm
Document No. 70-0099-02 │ www.psemi.com
©2004-2006 Peregrine Semiconductor Corp. All rights reserved.
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