PSHI2506 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module PSHI H-Bridge Configuration

PSHI 25/06
3
V_CE = 300V
mJ
V_GE = ±15V
R_G = 68Ω
2 ^{TVJ = 125°C}
t_d(on)
t_r
60
ns
40 ^t
1
20
E_on
0
14T60 ₀
0
10
20
30 A
I_C
Fig. 7 Typ. turn on energy and switching
2,0
mJ
V_CE = 300V
V_GE = ±15V
1,5 ^{IC = 15A}
T_VJ = 125°C
1,0
0,5
t_d(on)
E_on
t_r
60
ns
45
t
30
15
0,0
0
14T60 ₀
20 40 60 80 100 Ω 120
R_G
Fig. 9 Typ. turn on energy and switching
40
A
30
20
10
R_G = 68 Ω
T_VJ = 125°C
0
14T60
0 100 200 300 400 500 600 700 V
V
Fig. 11 Reverse biased safe operating area
2,0
mJ
E_off ^1,5
t_d(off)
V_CE = 300V
V_GE = ±15V
R_G = 68Ω
T_VJ = 125°C
400
ns
300
t
1,0
200
E_off
0,5
0,0
0
Fig. 8
100
t_f
14T60 ₀
10
20
30 A
I_C
Typ. turn off energy and switching
times versus collector current times
versus collector current
0,8
mJ
E_off 0,6
V_CE = 300V
V_GE = ±15V
I_C = 15A
T_VJ = 125°C
400
t_d(off)
E_off
ns
300 _t
0,4
200
0,2
100
t_f
0,0
0
14T60 ₀
20 40 60 80 100 Ω 120
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
Z_thJC
0,1
diode
IGBT
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01 0,1
VDI...25-06P1
1 s 10
Fig. 12 Typ. transient thermal impedance RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20