PSHI2506 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module PSHI H-Bridge Configuration

PSHI 25/06
50
A
40
I_C
30
V_GE= 17V
15V
13V
20
11V
T_J = 25°C
10
9V
0
14T60
0
1
2
3
4 V5
V_CE
Fig. 1 Typ. output characteristics
50
A
I_C ⁴⁰
30
20
V_GE= 17V
15V
13V
11V
T_J = 125°C
10
9V
0
14T60
0
1
2
3
4 V5
V_CE
Fig. 2 Typ. output characteristics
50
A
40
I_C
30
20
10
0
4
T_J = 125°C
6
8
V_CE = 20V
T_J = 25°C
10 12
V_GE
14T60
14 V 16
Fig. 3 Typ. transfer characteristics
20
V
V_GE ¹⁵
10
V_CE = 300V
I_C = 15A
5
0
0
20
40
60
Q_G
Fig. 5 Typ. turn on gate charge
14T60
nC 80
50
A
I_F ⁴⁰
30
20
T_J = 125°C
T_J = 25°C
10
0
14T60
0
1
2
V
3
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
40
A
30
I_RM
20
t_rr
T_J = 125°C
V_R = 300V
I_F = 15A
120
ns
90
60
10
30
I_RM
0
0 ^14T60
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
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 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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