PSIIX20-12 Datasheet, PDF (3/3 Pages) Powersem GmbH – IGBT Module

30
V_GE = 15 V
25
20
I_{C 15}
[A]
10
T_VJ = 25°C
T_VJ = 125°C
5
0
0
1
2
3
V_CE [V]
Fig. 1 Typ. output characteristics
30
25
20
I_C
15
[A]
10
5
T_VJ = 125°C
T_VJ = 25°C
0
5 6 7 8 9 10 11 12 13
V_GE [V]
Fig. 3 Typ. tranfer characteristics
4
R_G = 56
V_CE = 600 V
3
V_GE = ±15 V
T_VJ = 125°C
E_on
E_off
E
2
[mJ]
1
30
V_GE = 15 V
25
17 V
19 V
20
I_{C 15}
T_VJ = 125°C
[A]
10
PSIIX 20/12
13 V
11 V
9V
5
0
012345
V_CE [V]
Fig. 2 Typ. output characteristics
20
I_C = 15 A
V_CE = 600 V
15
V_{GE 10}
[V]
5
0
0 10 20 30 40 50 60
Q_G [nC]
Fig. 4 Typ. turn-on gate charge
2.8
I_C = 15 A
V_CE = 600 V
2.4
V_GE = ±15 V
T_VJ = 125°C
E
2.0
[mJ]
1.6
E_off
E_on
0
0 5 10 15 20 25 30 35
I_C [A]
Fig. 5 Typ. switching energy vs. collector current
1.2
40 60 80 100 120 140 160
R_G [ ]
Fig. 6 Typ. switching energy vs. gate resistance
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