PSIIX20-12 Datasheet, PDF (2/3 Pages) Powersem GmbH – IGBT Module

PSIIX 20/12
Diodes
Symbol
I_F25
I_F80
Conditions
T_C = 25°C
T_C = 80°C
Maximum Ratings
33
A
22
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
V
F
I_RM
t_rr
R_thJC
R_thJH
Conditions
I_F = 20 A; T_VJ = 25°C
T_VJ = 150°C
I_F = 20 A; di_F/dt = -750 A/µs; T_VJ = 125°C
V_R = 600 V; V_GE = 0 V
(per diode)
(per diode) with heatsink compound
Characteristic Values
min. typ. max.
1,8 2,2 V
2,2
V
tbd
A
tbd
ns
1,5 K/W
tbd
K/W
Component
Symbol
T_VJ
T_stg
V_ISOL
M_d
a
Conditions
I_ISOL ≤ 1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s²
Symbol
d_S
d_A
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
mm
11.2
mm
24
g
Tolerances: +/- 0,3 mm
POWERSEM GmbH, Walpersdorfer Str. 53 © 2009 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 email: [e-mail] FAX: 09122 - 9764 - 20